Semiconductor devices and methods of fabricating the same

ABSTRACT

A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction parallel to a top surface of the substrate. The gate electrode extends in a second direction parallel to the top surface of the substrate and intersects the active pattern. The gate capping pattern covers a top surface of the gate electrode and extends in a direction crossing the top surface of the substrate to cover a first sidewall of the gate electrode. The gate spacer covers a second sidewall of the gate electrode. The first sidewall and the second sidewall are opposite to each other in the second direction.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2016-0004335, filed on Jan. 13, 2016,and entitled, “Semiconductor Devices and Methods of Fabricating theSame,” is incorporated by reference herein in its entirety.

BACKGROUND

1. Field

One or more embodiments described herein relate to semiconductor devicesand methods of fabricating the semiconductor devices.

2. Description of the Related Art

Semiconductor devices typically include metal-oxide-semiconductor fieldeffect transistors (MOSFETs) incorporated into integrated circuits.Increases in integration require a scaling down of the sizes of theMOSFETs. This may produce a deterioration in operating characteristics.

SUMMARY

In accordance with one or more embodiments, a semiconductor deviceincludes an active pattern on a substrate, the active pattern extendingin a first direction parallel to a top surface of the substrate; a gateelectrode extending in a second direction parallel to the top surface ofthe substrate and intersecting the active pattern, the second directionintersecting the first direction; a gate capping pattern covering a topsurface of the gate electrode, the gate capping pattern extending in adirection crossing the top surface of the substrate to cover a firstsidewall of the gate electrode; and a gate spacer covering a secondsidewall of the gate electrode, wherein the first sidewall and thesecond sidewall are opposite to each other in the second direction.

In accordance with one or more other embodiments, a semiconductor deviceincludes a pair of gate electrodes on a substrate, the pair of gateelectrodes spaced apart from each other in a first direction parallel toa top surface of the substrate; and a gate capping pattern covering topsurfaces of the pair of gate electrodes, the gate capping patternextending in a direction perpendicular to the top surface of thesubstrate to fill a space between the pair of gate electrodes, whereineach of the pair of gate electrodes has a line shape having a firstwidth in the first direction and a second width in a second direction,wherein the second direction is parallel to the top surface of thesubstrate and is perpendicular to the first direction, and the firstwidth is greater than the second width.

In accordance with one or more other embodiments, a method offabricating a semiconductor device includes forming a sacrificial gatepattern on a substrate; forming a gate spacer covering sidewalls of thesacrificial gate pattern on the substrate; forming an interlayerinsulating layer covering the sacrificial gate pattern and the gatespacer on the substrate; removing the sacrificial gate pattern to form agap region defined by an inner sidewall of the gate spacer; forming apreliminary gate electrode in the gap region; forming a cutting maskpattern having an opening exposing a portion of a top surface of thepreliminary gate electrode on the interlayer insulating layer; anddividing the preliminary gate electrode into a pair of gate electrodesby removing a portion of the preliminary gate electrode using thecutting mask pattern as an etch mask.

In accordance with one or more other embodiments, a semiconductor deviceincludes an active pattern on a substrate; a gate electrode on theactive pattern; a gate capping pattern on a first sidewall of the gateelectrode; a gate spacer on a second sidewall of the gate electrodeopposing the first sidewall and on at least one of a third sidewall or afourth sidewall of the gate electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIG. 1 illustrates an embodiment of a semiconductor device;

FIG. 2 illustrates an embodiment of portion P in FIG. 1;

FIG. 3 illustrates views taken along section lines A-A′, B-B′, and C-C′in FIG. 1;

FIG. 4 illustrates a view taken along section lines D-D′ and E-E′ inFIG. 1;

FIGS. 5, 8, 11, 14, 17, and 20 illustrate various stages of anembodiment of a method for fabricating a semiconductor device;

FIGS. 6, 9, 12, 15, 18, and 21 illustrate views taken along sectionlines A-A′, B-B′, and C-C′ in FIGS. 5, 8, 11, 14, 17, and 20; and

FIGS. 7, 10, 13, 16, 19, and 22 illustrate views taken along sectionlines D-D′ and E-E′ in FIGS. 5, 8, 11, 14, 17, and 20.

DETAILED DESCRIPTION

FIGS. 1-4 illustrate an embodiment of a semiconductor device whichincludes an active pattern ACT on a substrate 100, which, for example,may be a semiconductor substrate. For example, the substrate 100 may bea silicon substrate or a silicon-on-insulator (SOI) substrate.

The active pattern ACT may protrude from the substrate 100 in adirection perpendicular to a top surface of the substrate 100 and mayextend in a first direction D1 parallel to the top surface of thesubstrate 100. In some embodiments, a plurality of active patterns ACTmay be provided and arranged in a second direction D2 intersecting thefirst direction D1 parallel to the top surface of the substrate 100.

Device isolation patterns 102 may be provided at respective sides of theactive pattern ACT. The device isolation patterns 102 may be on thesubstrate 100 and may extend in the first direction D1. The deviceisolation patterns 102 may be spaced apart from each other in the seconddirection D2, with the active pattern ACT therebetween. The deviceisolation patterns 102 may include at least one of an oxide, a nitride,or an oxynitride. In some embodiments, the device isolation patterns 102may expose sidewalls of an upper portion of the active pattern ACT. Forexample, the active pattern ACT may have an upper portion (an active finAF) exposed by the device isolation patterns 102. In certainembodiments, a top surface of the active pattern ACT may besubstantially coplanar with top surfaces of the device isolationpatterns 102, unlike FIGS. 1 to 4.

A gate electrode GE may be on the substrate 100 to intersect the activepattern ACT and the device isolation patterns 102. The gate electrode GEmay cover the active fin AF and may extend in the second direction D2 tocover top surfaces of the device isolation patterns 102. The gateelectrode GE may have a first sidewall S1 and a second sidewall S2opposite to each other in the second direction D2, and may have a thirdsidewall S3 and a fourth sidewall S4 opposite to each other in the firstdirection D1. The gate electrode GE may have a line shape extending inthe second direction D2.

In some embodiments, the gate electrode GE may have a width W1 in thefirst direction D1 (e.g., a width between the third and fourth sidewallsS3 and S4) and a width W2 in the second direction D2 (e.g., a widthbetween the first and second sidewalls S and S2). The width W2 in thesecond direction D2 of the gate electrode GE may be greater than thewidth W1 in the first direction D1 of the gate electrode GE.

A gate capping pattern CAP may be on a top surface of the gate electrodeGE. The gate capping pattern CAP may extend in the second direction D2and cover the top surface of the gate electrode GE. The gate cappingpattern CAP may further extend in a direction perpendicular to the topsurface of the substrate 100 to cover the first sidewall S1 of the gateelectrode GE. In addition, the gate capping pattern CAP may be incontact with the device isolation pattern 102 adjacent to the firstsidewall S1. The gate capping pattern CAP may be in direct contact withthe top surface and the first sidewall S1 of the gate electrode GE.

A gate spacer GSP may be on the second sidewall S2 of the gate electrodeGE and may extend onto the third sidewall S3 and the fourth sidewall S4of the gate electrode GE. The gate capping pattern CAP may extend fromthe first sidewall S1 of the gate electrode GE in a direction (e.g., thefirst direction D1) parallel to the top surface of the substrate 100, soas to be in contact with the gate spacer GSP when viewed from a planview. In some embodiments, the gate spacer GSP may cover sidewalls ofthe gate capping pattern CAP and a top surface of the gate spacer GSPmay be substantially coplanar with a top surface of the gate cappingpattern CAP.

A gate dielectric pattern GI may be between the gate electrode GE andthe active fin AF. The gate dielectric pattern GI may extend between thegate electrode GE and the device isolation patterns 102 and may extendbetween the gate electrode GE and the gate spacer GSP. The topmostsurface of the gate dielectric pattern GI may be substantially coplanarwith the top surface of the gate electrode GE.

The gate capping pattern CAP may laterally extend from the top surfaceof the gate electrode GE to cover the topmost surface of the gatedielectric pattern GI. The gate spacer GSP may be spaced apart from thegate electrode GE, with the gate dielectric pattern GI interposedtherebetween. The gate capping pattern CAP may be in direct contact withthe first sidewall S1 of the gate electrode GE. The gate capping patternCAP may extend from the first sidewall S1 of the gate electrode GE inthe direction (e.g., first direction D1) parallel to the top surface ofthe substrate 100, so as to be in contact with the gate dielectricpattern GI and the gate spacer GSP when viewed from a plan view.

The gate electrode GE may include a first conductive pattern 150adjacent to the gate dielectric pattern GI and a second conductivepattern 152 spaced apart from the gate dielectric pattern GI, with thefirst conductive pattern 150 interposed therebetween. The secondconductive pattern 152 may include a different material from the firstconductive pattern 150.

The first conductive pattern 150 may extend along a top surface of thegate dielectric pattern GI. For example, the first conductive pattern150 may be between the second conductive pattern 152 and the active finAF and may extend between the second conductive pattern 152 and each ofthe device isolation patterns 102. The first conductive pattern 150 mayextend between the second conductive pattern 152 and the gate spacerGSP.

The gate capping pattern CAP may cover top surfaces of the first andsecond conductive patterns 150 and 152 and may extend in the directionperpendicular to the top surface of the substrate 100, so as to be indirect contact with a sidewall of the second conductive pattern 152 anda sidewall of the first conductive pattern 150. The sidewall of thesecond conductive pattern 152 and the sidewall of the first conductivepattern 150 may constitute at least a portion of the first sidewall S1of the gate electrode GE. The gate capping pattern CAP may extend fromthe sidewall of the second conductive pattern 152 in the direction(e.g., the first direction D1) parallel to the top surface of thesubstrate 100, so as to be in direct contact with the first conductivepattern 150 when viewed from a plan view.

The first conductive pattern 150 may include, for example, a conductivemetal nitride (e.g., titanium nitride or tantalum nitride). The secondconductive pattern 152 may include, for example, at least one of aconductive metal nitride (e.g., titanium nitride or tantalum nitride) ora metal (e.g., aluminum or tungsten). The second conductive pattern 152may include a different material from the first conductive pattern 150.The gate dielectric pattern GI may include at least one high-kdielectric material. For example, the gate dielectric pattern GI mayinclude at least one of hafnium oxide, hafnium silicate, zirconiumoxide, or zirconium silicate. The gate spacer GSP and the gate cappingpattern CAP may include, for example, a nitride (e.g., silicon nitride).

The gate electrode GE, the gate dielectric pattern GI, and the gatespacer GSP may be defined as a gate structure GS. In one embodiment, aplurality of gate structures GS may be provided. For example, a pair ofgate structures GS may be spaced apart from each other in the seconddirection D2. Each of the pair of gate structures GS may intersect acorresponding one of the active patterns ACT. The pair of gatestructures GS may include a pair of gate electrodes GE spaced apart fromeach other in the second direction D2, respectively.

The gate capping pattern CAP may cover top surfaces of the pair of gateelectrodes GE and may extend in the direction perpendicular to the topsurface of the substrate 100 to fill a space between the pair of gatestructures GS. For example, each of the pair of gate electrodes GE mayhave the first to fourth sidewalls S1, S2, S3, and S4. The firstsidewalls S1 of the pair of gate electrodes GE may face each other. Thegate capping pattern CAP may fill the space between the first sidewallsS facing each other and may be in contact with the device isolationpattern 102 between the pair of gate electrodes GE.

The gate capping pattern CAP may be in direct contact with the firstsidewalls S1 of the pair of gate electrodes GE. The gate capping patternCAP may extend from the first sidewalls S1 of the pair of gateelectrodes GE in the direction (e.g., the first direction D1) parallelto the top surface of the substrate 100, so as to be in contact with thegate dielectric patterns GI and the gate spacers GSP on sidewalls of thepair of gate electrodes GE when viewed from a plan view.

In some embodiments, another pair of gate structures GS may be spacedapart from each other in the second direction D2. For example, the pairof gate structures GS may be defined as first gate structures GS1 andthe other pair of gate structures GS may be defined as second gatestructures GS2. The second gate structures GS2 may be spaced apart fromthe first gate structures GS1 in the first direction D1, respectively.Each of the second gate structures GS2 may intersect a corresponding oneof active patterns ACT.

The second gate structures GS2 may include another pair of gateelectrodes GE spaced apart from each other in the second direction D2,respectively. An additional gate capping pattern CAP may be on topsurfaces of the another pair of gate electrodes GE and may extend in thedirection perpendicular to the top surface of the substrate 100 to filla space between the second gate structures GS2. For example, each of theother pair of gate electrodes GE may have the first to fourth sidewallsS1, S2, S3, and S4. The first sidewalls S1 of the other pair of gateelectrodes GE may face each other.

The additional gate capping pattern CAP may fill the space between thefirst sidewalls S1 facing each other and may be in contact with thedevice isolation pattern 102 between the another pair of gate electrodesGE. The additional gate capping pattern CAP may be in direct contactwith the first sidewalls S1 of the other pair of gate electrodes GE. Theadditional gate capping pattern CAP may extend from the first sidewallsS1 of the other pair of gate electrodes GE in the direction (e.g., thefirst direction D1) parallel to the top surface of the substrate 100, soas to be in contact with the gate dielectric patterns GI and the gatespacers GSP on sidewalls of the another pair of gate electrodes GE whenviewed from a plan view.

The gate capping pattern CAP on the first gate structures GS1 may extendin the first direction D1, so as to be connected to the additional gatecapping pattern CAP on the second gate structures GS2 when viewed from aplan view. In some embodiments, the gate capping pattern CAP may extendfrom the space between the first gate structures GS1 to the spacebetween the second gate structures GS2 along the first direction D1, soas to be connected to the additional gate capping pattern CAP. The gatecapping pattern CAP and the additional gate capping pattern CAP may beconnected to each other to constitute one gate capping pattern CAP thatis in one body. For example, a portion of the one gate capping patternCAP may extend from the space between the first gate structures GS1 intothe space between the second gate structures GS2 along the firstdirection D1. A bottom surface of the portion of the one gate cappingpattern CAP may be in contact with the device isolation pattern 102thereunder.

Source/drain regions SD may be on the active pattern ACT at respectivesides of the gate structure GS. The source/drain regions SD may belaterally spaced apart from each other, with the active fin AFtherebetween. Bottom surfaces of the source/drain regions SD may belower than a top surface of the active fin AF.

The source/drain regions SD may include epitaxial layers formed usingthe active pattern ACT as a seed. For example, the source/drain regionsSD may include at least one selected from a group consisting ofsilicon-germanium (SiGe), silicon (Si), and silicon carbide (SiC) formedby an epitaxial growth process using the active pattern ACT as a seed.

In some embodiments, when the semiconductor device includes acomplementary metal-oxide-semiconductor (CMOS) structure, a firstepitaxial layer may be provided for source/drain regions of an N-channelmetal-oxide-semiconductor field effect transistor (NMOSFET) and a secondepitaxial layer may be provided for source/drain regions of a P-channelMOSFET (PMOSFET). The first epitaxial layer may provide a tensile strainto a channel region (e.g., the active fin AF) of the NMOSFET. The secondepitaxial layer may provide a compressive strain to a channel region(e.g., the active fin AF) of the PMOSFET. For example, the firstepitaxial layer may be formed of silicon (Si) and/or silicon carbide(SiC), and the second epitaxial layer may be formed of silicon-germanium(SiGe). The first and second epitaxial layers may be formed fromdifferent materials in another embodiment. The source/drain regions SDmay further include dopants. The dopants may be employed to improveelectrical characteristics of a transistor including the source/drainregions SD. When the transistor is an NMOSFET, the dopants may be, forexample, phosphorus (P). When the transistor is a PMOSFET, the dopantsmay be, for example, boron (B).

An interlayer insulating layer 160 may be on the substrate 100 to coverthe gate structure GS, the gate capping pattern CAP, and thesource/drain regions SD. For example, the interlayer insulating layer160 may include at least one of a silicon oxide layer, a silicon nitridelayer, a silicon oxynitride layer, or a low-k dielectric layer.

In some embodiments, a top surface of the gate capping pattern CAP maybe substantially coplanar with a top surface of the interlayerinsulating layer 160. The gate spacer GSP may extend between the gatecapping pattern CAP and the interlayer insulating layer 160. The gatecapping pattern CAP may extend from the first sidewall S1 of the gateelectrode GE in the first direction D1, so as to be in contact with theinterlayer insulating layer 160. When a plurality of gate structures GSis provided, the gate capping pattern CAP may extend from the spacebetween the first gate structures GS1 into the space between the secondgate structures GS2 in the first direction D1 and may laterallypenetrate the interlayer insulating layer 160, so as to be connected tothe additional gate capping pattern CAP.

An insulating layer may be on the interlayer insulating layer 160. Theinsulating layer may include, for example, at least one of an oxide, anitride, or an oxynitride. First contact plugs may penetrate theinsulating layer and the interlayer insulating layer 160, so as to beelectrically connected to the source/drain regions SD. A second contactplug may penetrate the insulating layer and the gate capping patternCAP, so as to be electrically connected to the gate electrode GE.

Interconnections may be on the insulating layer and may be connected tothe first and second contact plugs. The interconnections may beelectrically connected to the source/drain regions SD and the gateelectrode GE through the first and second contact plugs. Operatingvoltages may be applied to the source/drain regions SD and the gateelectrode GE through the interconnections and the first and secondcontact plugs. The first and second contact plugs and theinterconnections may include a conductive material.

FIGS. 5, 8, 11, 14, 17, and 20 are plan views illustrating variousstages in an embodiment of a method for fabricating a semiconductordevice. FIGS. 6, 9, 12, 15, 18, and 21 are cross-sectional views takenalong lines A-A′, B-B′, and C-C′ in FIGS. 5, 8, 11, 14, 17, and 20.FIGS. 7, 10, 13, 16, 19, and 22 are cross-sectional views taken alonglines D-D′ and E-E′ in FIGS. 5, 8, 11, 14, 17, and 20.

Referring to FIGS. 5 to 7, an active pattern ACT may be formed on asubstrate 100. In some embodiments, forming the active pattern ACT mayinclude patterning the substrate 100 to form trenches T defining theactive pattern ACT. The trenches T may have linear shapes extending inthe first direction D1 and may be spaced apart from each other in thesecond direction D2. In some embodiments, a mask pattern defining theactive pattern ACT may be formed on the substrate 100, and the substrate100 may be anisotropically etched using the mask pattern as an etch maskto form the trenches T.

Device isolation patterns 102 may be formed at respective sides of theactive pattern ACT. The device isolation patterns 102 may be formed tofill the trenches T. Forming the device isolation patterns 102 mayinclude, for example, forming an insulating layer filling the trenches Ton the substrate 100 and planarizing the insulating layer until the maskpattern is exposed.

Upper portions of the device isolation patterns 102 may be recessed toexpose an upper portion of the active pattern ACT. The upper portion ofthe active pattern ACT, exposed by the device isolation patterns 102,may be defined as an active fin AF. The upper portions of the deviceisolation patterns 102 may be recessed, for example, by a wet etchingprocess using an etch recipe having an etch selectivity with respect tothe active pattern ACT. The mask pattern may be removed while the upperportions of the device isolation patterns 102 are recessed.

A sacrificial gate pattern 110 may be formed on the substrate 100 tointersect the active pattern ACT and the device isolation patterns 102.The sacrificial gate pattern 110 may extend in the second direction D2.The sacrificial gate pattern 110 may cover a top surface and sidewallsof the active pattern ACT (e.g., the active fin AF) and may extend ontotop surfaces of the device isolation patterns 102. When a plurality ofactive patterns ACT are formed, the active patterns ACT may extend inthe first direction D1 and may be spaced apart from each other in thesecond direction D2. In this case, the sacrificial gate pattern 110 mayextend in second direction D2 to intersect the active patterns ACT.

An etch stop pattern 112 may be provided between the sacrificial gatepattern 110 and the active pattern ACT, and may extend between thesacrificial gate pattern 110 and each of the device isolation patterns102. In some embodiments, an etch stop layer and a sacrificial gatelayer may be sequentially formed on the substrate 100 to cover theactive pattern ACT and the device isolation patterns 102. A sacrificialmask pattern 104 defining the sacrificial gate pattern 110 may be formedon the sacrificial gate layer.

The sacrificial gate layer and the etch stop layer may be sequentiallyetched, using the sacrificial mask pattern 104 as an etch mask, to formthe sacrificial gate pattern 110 and the etch stop pattern 112. Forexample, the etch stop layer may include a silicon oxide layer. Thesacrificial gate layer may include a material having an etch selectivitywith respect to the etch stop layer. For example, the sacrificial gatelayer may include a poly-silicon layer. The sacrificial gate layer maybe patterned using the sacrificial mask pattern 104 as the etch mask toform the sacrificial gate pattern 110.

Patterning the sacrificial gate layer may include performing an etchingprocess having an etch selectivity with respect to the etch stop layer.The etch stop layer at respective sides of the sacrificial gate pattern110 may be removed after the formation of the sacrificial gate pattern110. Thus, the etch stop pattern 112 may be formed under the sacrificialgate pattern 110.

A gate spacer GSP may be formed on sidewalls of the sacrificial gatepattern 110. The gate spacer GSP may include, for example, siliconnitride. Forming the gate spacer GSP may include forming a gate spacerlayer covering the sacrificial gate pattern 110 on the substrate 100 andanisotropically etching the gate spacer layer.

The sacrificial mask pattern 104, the sacrificial gate pattern 110, theetch stop pattern 112, and the gate spacer GSP may be defined as asacrificial gate structure SGS. Since the sacrificial gate structure SGSintersects the active pattern ACT, one or more first regions R1 andsecond regions R2 may be defined in the active fin AF. Each first regionR1 may be under a sacrificial gate structure SGS. For example, the firstregion R1 may correspond to a region of the active fin AF which overlapswith the sacrificial gate structure SGS when viewed from a plan view.The second regions R2 may correspond to other regions of the active finAF at respective sides of the sacrificial gate structure SGS and arelaterally spaced apart from each other by the first region R1.

Referring to FIGS. 8 to 10, the second regions R2 of the active fin AFmay be removed to form first recess regions 114 in the active patternACT. The second regions R2 of active fin AF may be removed using, forexample, a dry or wet etching process.

Source/drain regions SD may be formed on the active pattern ACT atrespective sides of the sacrificial gate structure SGS. The source/drainregions SD may be formed to fill the first recess regions 114. Thesource/drain regions SD may be formed, for example, by performing aselective epitaxial growth (SEG) process using surfaces exposed by thefirst recess regions 114 of the active pattern ACT as a seed. Each ofthe source/drain regions SD may include at least one selected from agroup consisting of silicon-germanium (SiGe), silicon (Si), and siliconcarbide (SiC) grown using the surface of the active pattern ACT as theseed.

Forming the source/drain regions SD may further include doping thesource/drain regions SD with dopants during or after the SEG process.The dopants may be employed to improve electrical characteristics of atransistor including the source/drain regions SD. When the transistor isan NMOSFET, the dopants may be, for example, phosphorus (P). When thetransistor is a PMOSFET, the dopants may be, for example, boron (B).

An interlayer insulating layer 160 may be formed on the substrate 100having the source/drain regions SD. Forming the interlayer insulatinglayer 160 may include forming an insulating layer covering thesource/drain regions SD and the sacrificial gate structure SGS on thesubstrate 100, and planarizing the insulating layer until thesacrificial gate pattern 110 is exposed. The sacrificial mask pattern104 may be removed by the planarization process. The interlayerinsulating layer 160 may include, for example, at least one of a siliconoxide layer, a silicon nitride layer, a silicon oxynitride layer, or alow-k dielectric layer.

Referring to FIGS. 11 to 13, the sacrificial gate pattern 110 and theetch stop pattern 112 may be removed to form a gap region 116 in theinterlayer insulating layer 160. The gap region 116 may be an emptyregion defined by the gate spacer GSP. The gap region 116 may expose thefirst region R1 of the active fin AF.

Forming the gap region 116 may include etching the sacrificial gatepattern 110 by performing an etching process having an etch selectivitywith respect to the gate spacer GSP, the interlayer insulating layer160, and the etch stop pattern 112. Forming the gap region 116 mayfurther include removing the etch stop pattern 112 to expose the firstregion R1 of the active fin AF.

A gate dielectric pattern GI and a preliminary gate electrode PGE may beformed to fill the gap region 116. For example, a gate dielectric layermay be formed on the interlayer insulating layer 160 to partially fillthe gap region 116. The gate dielectric layer may be formed to cover thefirst region R1 of the active fin AF. The gate dielectric layer mayinclude at least one high-k dielectric material. For example, the gatedielectric layer may include at least one of hafnium oxide, hafniumsilicate, zirconium oxide, or zirconium silicate.

The gate dielectric layer may be formed, for example, by performing anatomic layer deposition (ALD) process. A gate electrode layer may beformed on the gate dielectric layer to fill the rest of the gap region116. The gate electrode layer may include a first conductive layeradjacent to the gate dielectric layer and a second conductive layerspaced apart from the gate dielectric layer, with the first conductivelayer therebetween. The first conductive layer may include, for example,a conductive metal nitride (e.g., titanium nitride or tantalum nitride).The second conductive layer may include, for example, at least one of aconductive metal nitride (e.g., titanium nitride or tantalum nitride) ora metal (e.g., aluminum or tungsten). The second conductive layer mayinclude a different material from the first conductive layer.

The gate electrode layer and the gate dielectric layer may be planarizedto form the gate dielectric pattern GI and the preliminary gateelectrode PGE. The preliminary gate electrode PGE may include a firstpreliminary conductive pattern 150P adjacent to the gate dielectricpattern GI and a second preliminary conductive pattern 152P spaced apartfrom the gate dielectric pattern GI, with the first preliminaryconductive pattern 150P therebetween. Top surfaces of the interlayerinsulating layer 160 and the gate spacer GSP may be exposed by theplanarization process. The gate dielectric pattern GI may extend along abottom surface of the preliminary gate electrode PGE and may extend ontosidewalls of the preliminary gate electrode PGE, so as to be disposedbetween the preliminary gate electrode PGE and the gate spacer GSP.

Referring to FIGS. 14 to 16, upper portions of the gate dielectricpattern GI and the preliminary gate electrode PGE may be recessed toform a second recess region 118 in the gap region 116. The second recessregion 118 may expose inner sidewalls of the gate spacer GSP.

Thereafter, a cutting mask pattern 120 filling the second recess region118 may be formed on the interlayer insulating layer 160. The cuttingmask pattern 120 may have an opening 122 that intersects the secondrecess region 118 and partially overlaps the second recess region 118when viewed from a plan view. The opening 122 may expose a portion ofthe top surface of the preliminary gate electrode PGE and a portion ofthe top surface of the gate dielectric pattern GI through the secondrecess region 118. In addition, the opening 122 may expose a portion ofthe top surface of the gate spacer GSP disposed at respective sides ofthe preliminary gate electrodes PGE and a portion of the top surface ofthe interlayer insulating layer 160.

When a plurality of active patterns ACT is included, a pair of activepatterns ACT may extend in the first direction D1 and may be spacedapart from each other in the second direction D2. In this case, thepreliminary gate electrode PGE may intersect the pair of active patternsACT, and the opening 122 may be formed over the device isolation pattern102 between the pair of active patterns ACT.

When a plurality of preliminary gate electrodes PGE is included, a pairof preliminary gate electrodes PGE may extend in the second direction D2and may be spaced apart from each other in the first direction D1. Inthis case, the opening 122 of the cutting mask pattern 120 may extend inthe first direction D1 to intersect the pair of preliminary gateelectrodes PGE, when viewed from a plan view. The opening 122 may exposeportions of the top surfaces of the pair of preliminary gate electrodesPGE and a portion of the top surface of the gate dielectric pattern GIat respective sides of each of the pair of preliminary gate electrodesPGE. In addition, the opening 122 may expose a portion of the topsurface of the gate spacer GSP at respective sides of each of the pairof preliminary gate electrodes PGE and a portion of the top surface ofthe interlayer insulating layer 160 between the pair of preliminary gateelectrodes PGE.

The cutting mask pattern 120 may include, for example, aspin-on-hardmask (SOH) material. In some embodiments, forming thecutting mask pattern 120 may include forming a cutting mask layerfilling the second recess region 118 on the interlayer insulating layer160, and forming a first preliminary mask pattern 130 and a secondpreliminary mask pattern 132 on the cutting mask layer. The firstpreliminary mask pattern 130 may have a preliminary opening 130 aintersecting the preliminary gate electrode PGE, when viewed from a planview. The second preliminary mask pattern 132 may be formed on an innersidewall of the preliminary opening 130 a and may define a region, inwhich the opening 122 will be formed, on the cutting mask layer. Thecutting mask layer may be patterned using the first and secondpreliminary mask patterns 130 and 132 as etch masks to form the cuttingmask pattern 120 having the opening 122. The first preliminary maskpattern 130 may include, for example, silicon oxynitride, and the secondpreliminary mask pattern 132 may include, for example, silicon oxide.

Referring to FIGS. 17 to 19, the top surfaces of the interlayerinsulating layer 160 and the gate spacer GSP, which are exposed by theopening 122, may be recessed by a recess process. For example, therecess process may be a dry etching process using the cutting maskpattern 120 as an etch mask. The first and second preliminary maskpatterns 130 and 132 may be removed during the recess process. Sidewallsof the gate dielectric pattern GI may be partially exposed by the recessprocess. After the recess process, portions of the interlayer insulatinglayer 160 and the gate spacer GSP may remain and may be exposed by theopening 122.

Referring to FIGS. 20 to 22, a portion of the preliminary gate electrodePGE, which is exposed by the opening 122, may be removed after therecess process. Thus, the preliminary gate electrode PGE may be dividedinto a pair of gate electrodes GE spaced apart from each other in thesecond direction D2. In addition, a portion of the gate dielectricpattern GI, which is exposed by the opening 122, may also be removed.

Thus, the gate dielectric pattern GI may be locally formed on a bottomsurface and sidewalls of each of the gate electrodes GE. The portions ofthe interlayer insulating layer 160 and the gate spacer GSP, which areexposed by the opening 122, may also be removed during the removalprocess. Thus, the opening 122 may expose a top surface of the deviceisolation pattern 102 between the pair of gate electrodes GE. Forexample, the removal process may be a dry etching process using thecutting mask pattern 120 as an etch mask. The first preliminaryconductive pattern 150P may be divided into first conductive patterns150 by the removal process. The second preliminary conductive pattern152P may be divided into second conductive patterns 152 by the removalprocess. The pair of gate electrodes GE may include the first conductivepatterns 150, respectively. In addition, the pair of gate electrodes GEmay include the second conductive patterns 152, respectively.

Each of the gate electrodes GE, the gate dielectric pattern GI on thebottom surface and the sidewalls of each of the gate electrodes GE, andthe gate spacer GSP on the sidewalls of each of the gate electrodes GEmay constitute a gate structure GS. For example, portions of thepreliminary gate electrode PGE, the gate dielectric pattern GI, the gatespacer GSP, and the interlayer insulating layer 160 may be removedthrough the opening 122 of the cutting mask pattern 120. Thus, a pair ofthe gate structures GS spaced apart from each other in the seconddirection D2 may be formed on the substrate 100. An empty region 124 maybe defined between the pair of gate structures GS. The empty region 124may expose the device isolation pattern 102 between the pair of gatestructures GS.

In some embodiments, the opening 122 of the cutting mask pattern 120 mayintersect the pair of preliminary gate electrodes PGE. In this case,portions of the pair of preliminary gate electrodes PGE, portions of thegate dielectric pattern GI and the gate spacer GSP on both sidewalls ofeach of the preliminary gate electrodes PGE, and a portion of theinterlayer insulating layer 160 between the pair of preliminary gateelectrodes PGE may be removed through the opening 122. Thus, one pair ofgate structures GS and another pair of gate structures GS may be formedon the substrate 100.

The pair of gate structures GS may be spaced apart from each other inthe second direction D2. The other pair of gate structures GS may bespaced apart from the pair of gate structures GS in the first directionD1. In this case, an empty region 124 may be defined between the pair ofgate structures GS, between the another pair of gate structures GS, andin the interlayer insulating layer 160. The empty region 124 may extendfrom a space between the pair of gate structures GS into a space betweenthe another pair of gate structures GS in the first direction D1 tolaterally penetrate the interlayer insulating layer 160. The emptyregion 124 may expose the device isolation pattern 102 between the pairof gate structures GS and between the another pair of gate structures GSand may penetrate the interlayer insulating layer 160 to expose thedevice isolation pattern 102.

Referring again to FIGS. 1 to 4, the cutting mask pattern 120 may beremoved. The cutting mask pattern 120 may be removed, for example, by anashing process and/or a strip process. Thereafter, a gate cappingpattern CAP may be formed to fill the second recess region 118 and theempty region 124.

Forming the gate capping pattern CAP may include forming a gate cappinginsulating layer filling the second recess region 118 and the emptyregion 124 on the interlayer insulating layer 160 after the removal ofthe cutting mask pattern 120. Then, the gate capping insulating layermay be planarized until the interlayer insulating layer 160 is exposed.Thus, a top surface of the gate capping pattern CAP may be substantiallycoplanar with the top surface of the interlayer insulating layer 160.The gate capping insulating layer may include, for example, a siliconnitride layer.

An insulating layer may be formed on the interlayer insulating layer160. First contact holes may be formed to penetrate the insulating layerand the interlayer insulating layer 160. The first contact holes mayexpose the source/drain regions SD. Upper portions of the source/drainregions SD may be partially removed by an etching process of forming thefirst contact holes.

A second contact hole may be formed to penetrate the insulating layerand the gate capping pattern CAP. The second contact holes may exposethe gate electrode GE. Thereafter, first contact plugs may be formed tofill the first contact holes, and a second contact plug may be formed tofill the second contact hole. Interconnections may be formed on theinsulating layer in order to be connected to the first and secondcontact plugs. The interconnections may be electrically connected to thesource/drain regions SD and the gate electrode GE through the first andsecond contact plugs. Operating voltages may be applied to thesource/drain regions SD and the gate electrode GE through theinterconnections and the first and second contact plugs.

By way of summation and review, a sacrificial gate pattern may bedivided into a pair of sacrificial gate patterns spaced apart from eachother in a second direction D2 by a patterning process. A gate spacermay be formed on sidewalls of each of the pair of sacrificial gatepatterns. Thereafter, source/drain regions may be formed at respectivesides of each of the pair of sacrificial gate patterns.

Each of the pair of sacrificial gate patterns may be replaced with agate electrode. Thus, a pair of gate electrodes may be formed to bespaced apart from each other in the second direction D2.

To form the source/drain regions, an active pattern at respective sidesof each of the pair of sacrificial gate patterns may be recessed, and anepitaxial growth process may be performed using the recessed activepattern as a seed. In this case, loss of the gate spacers on thesidewalls of the pair of sacrificial gate patterns may occur during theprocess of recessing the active pattern. Thus, the sidewalls of the pairof sacrificial gate patterns may be partially exposed.

The exposed sidewalls of the pair of sacrificial gate patterns mayfunction as a seed during the epitaxial growth process. Thus, undesiredepitaxial growth layers may be formed on the exposed sidewalls of thepair of sacrificial gate patterns. These may cause an electrical shortbetween the pair of gate electrodes formed in a subsequent process.

In accordance with one or more embodiments, after a gate spacer isformed on sidewalls of a sacrificial gate pattern, the sacrificial gatepattern may be replaced with a preliminary gate electrode. Thepreliminary gate electrode may be patterned and divided into the pair ofgate electrodes spaced apart from each other. The gate spacer may bepatterned to be disposed on sidewalls of each of the pair of gateelectrodes. Thus, it is possible to prevent defects which may be causedby patterning the sacrificial gate pattern.

In addition, the portions of the gate spacer and the portions of aninterlayer insulating layer at respective sides of the preliminary gateelectrode may be removed before removal of the portion of thepreliminary gate electrode, during the process of patterning thepreliminary gate electrode. Thus, it is possible to prevent the pair ofgate electrodes from being electrically shorted to each other, forexample, by etch by-products occurring during the removal of the portionof the preliminary gate electrode, and also may be able to remain onsidewalls of the portions of the gate spacer and the portions of theinterlayer insulating layer. As a result, electrical characteristics andreliability of the semiconductor device may be improved.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. Theembodiments may be combined to form additional embodiments. In someinstances, as would be apparent to one of skill in the art as of thefiling of the present application, features, characteristics, and/orelements described in connection with a particular embodiment may beused singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwiseindicated. Accordingly, it will be understood by those of skill in theart that various changes in form and details may be made withoutdeparting from the spirit and scope of the embodiments set forth in theclaims.

What is claimed is:
 1. A semiconductor device, comprising: an activepattern on a substrate, the active pattern extending in a firstdirection parallel to a top surface of the substrate; a gate electrodeextending in a second direction parallel to the top surface of thesubstrate and intersecting the active pattern, the second directionintersecting the first direction; a gate capping pattern covering a topsurface of the gate electrode, the gate capping pattern extending in adirection crossing the top surface of the substrate to cover a firstsidewall of the gate electrode; and a gate spacer covering a secondsidewall of the gate electrode, wherein the first sidewall and thesecond sidewall are opposite to each other in the second direction. 2.The semiconductor device as claimed in claim 1, wherein: the gateelectrode has a third sidewall and a fourth sidewall opposite to eachother in the first direction, and the gate spacer extends onto the thirdsidewall and the fourth sidewall.
 3. The semiconductor device as claimedin claim 2, wherein the gate capping pattern is in direct contact withthe first sidewall.
 4. The semiconductor device as claimed in claim 2,further comprising: an interlayer insulating layer on the substrate andcovering the active pattern and the gate electrode, wherein the gatecapping pattern is in the interlayer insulating layer and extends alongthe top surface of the gate electrode, and wherein the gate spacer isbetween the gate electrode and the interlayer insulating layer andextends between the gate capping pattern and the interlayer insulatinglayer.
 5. The semiconductor device as claimed in claim 4, wherein thegate capping pattern extends from the first sidewall of the gateelectrode in a direction parallel to the top surface of the substrate,so as to be in contact with the gate spacer.
 6. The semiconductor deviceas claimed in claim 4, wherein the gate capping pattern extends from thefirst sidewall of the gate electrode in a direction parallel to the topsurface of the substrate, so as to be in contact with the gate spacerand the interlayer insulating layer.
 7. The semiconductor device asclaimed in claim 1, further comprising: a gate dielectric patternbetween the active pattern and the gate electrode and extending along abottom surface of the gate electrode, wherein the gate dielectricpattern extends between the gate spacer and the gate electrode, andwherein the gate capping pattern is in direct contact with the firstsidewall.
 8. The semiconductor device as claimed in claim 7, wherein thegate electrode includes: a first conductive pattern adjacent to the gatedielectric pattern; and a second conductive pattern spaced apart fromthe gate dielectric pattern with the first conductive pattern interposedtherebetween, wherein the first conductive pattern is between the gatespacer and the second conductive pattern, and wherein the gate cappingpattern is in direct contact with the second conductive pattern.
 9. Thesemiconductor device as claimed in claim 1, further comprising: deviceisolation patterns at respective sides of the active pattern andextending in the first direction, wherein the gate electrode extendsonto top surfaces of the device isolation patterns, and wherein the gatecapping pattern extends in the direction perpendicular to the topsurface of the substrate, so as to be in contact with the deviceisolation pattern adjacent to the first sidewall of the gate electrode.10. The semiconductor device as claimed in claim 9, wherein: the activepattern has sidewalls exposed by the device isolation patterns, and thegate electrode covers a top surface and the exposed sidewalls of theactive pattern.
 11. A semiconductor device, comprising: a pair of gateelectrodes on a substrate, the pair of gate electrodes spaced apart fromeach other in a first direction parallel to a top surface of thesubstrate; and a gate capping pattern covering top surfaces of the pairof gate electrodes, the gate capping pattern extending in a directionperpendicular to the top surface of the substrate to fill a spacebetween the pair of gate electrodes, wherein each of the pair of gateelectrodes has a line shape having a first width in the first directionand a second width in a second direction, wherein the second directionis parallel to the top surface of the substrate and is perpendicular tothe first direction, and wherein the first width is greater than thesecond width.
 12. The semiconductor device as claimed in claim 11,wherein: each of the pair of gate electrodes has a first sidewall and asecond sidewall which are opposite to each other in the first direction,the first sidewalls of the pair of gate electrodes face each other, thegate capping pattern covers the first sidewalls of the pair of gateelectrodes, and the semiconductor device includes: a gate spacercovering the second sidewall of each of the pair of gate electrodes; anda gate dielectric pattern between the substrate and each of the pair ofgate electrodes and extending between the gate spacer and each of thepair of gate electrodes.
 13. The semiconductor device as claimed inclaim 12, wherein: each of the pair of gate electrodes has a thirdsidewall and a fourth sidewall which are opposite to each other in thesecond direction, and the gate spacer and the gate dielectric patternextend onto the third sidewall and the fourth sidewall of each of thepair of gate electrodes.
 14. The semiconductor device as claimed inclaim 13, wherein the gate capping pattern is in direct contact with thefirst sidewalls of the pair of gate electrodes.
 15. The semiconductordevice as claimed in claim 14, wherein the gate capping pattern extendsalong the top surfaces of the pair of gate electrodes and extends fromthe first sidewalls of the pair of gate electrodes in the seconddirection, so as to be in contact with the gate spacer on sidewalls ofeach of the pair of gate electrodes.
 16. A semiconductor device,comprising: an active pattern on a substrate; a gate electrode on theactive pattern; a gate capping pattern on a first sidewall of the gateelectrode; and a gate spacer on a second sidewall of the gate electrodeopposing the first sidewall and on at least one of a third sidewall or afourth sidewall of the gate electrode.
 17. The semiconductor device asclaimed in claim 16, wherein the gate capping pattern covers a topsurface of the gate electrode.
 18. The semiconductor device as claimedin claim 16, further comprising: an interlayer insulating layer on theactive pattern and the gate electrode, wherein the gate spacer isbetween the gate electrode and the interlayer insulating layer andextends between the gate capping pattern and the interlayer insulatinglayer.
 19. The semiconductor device as claimed in claim 16, wherein thegate electrode includes: a first conductive pattern; and a secondconductive pattern, wherein the first conductive pattern is between thegate spacer and the second conductive pattern and wherein the gatecapping pattern is on the second conductive pattern.
 20. Thesemiconductor device as claimed in claim 16, wherein the gate cappingpattern is in direct contact with the first sidewall.